학술논문
Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability
Document Type
Periodical
Author
Source
IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 19(2):249-254 Jun, 2019
Subject
Language
ISSN
1530-4388
1558-2574
1558-2574
Abstract
This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.