학술논문

Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications
Document Type
Conference
Source
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2016 International Symposium on. :1-2 Apr, 2016
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Hafnium oxide
Resistance
Random access memory
Thermal stability
Tin
Nonvolatile memory
Language
Abstract
Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.