학술논문
BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions
Document Type
Conference
Author
Source
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :67-69 Mar, 2022
Subject
Language
Abstract
Si doped HfO 2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. These parameters were electric field, capacitor area, and temperature and they were evaluated on single and parallel structured capacitors in order to understand their impact on wake-up, fatigue, imprint, and retention.