학술논문

Heater system optimization for robust ePCM reliability and scalability in 28nm FDSOI technology
Document Type
Conference
Source
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :28.1.1-28.1.4 Dec, 2021
Subject
Components, Circuits, Devices and Systems
Resistance
Temperature measurement
Scalability
Microprocessors
Silicon-on-insulator
Computer architecture
Programming
Language
ISSN
2156-017X
Abstract
One of the most promising Embedded Phase Change Memory (ePCM) integration scheme is the wall architecture, which relies on the dedicated Heater element to thermally switch the device. A good control of this element is a key factor to satisfy the performance requirements of the automotive market. In this paper, the optimization of TiSiN Heater system in $0.019\mu \mathrm{m}^{2}\text{ePCM}$ cell realized with 28nm FDSOI technology is extensively reported. Key fabrication parameters defining heating efficiency are investigated, covering a large range of Heater resistance. Their impact on $e$PCM reliability of elementary device and 16MB memory array, considering both retention and endurance, is characterized and the key role played by Heater is demonstrated, opening a path to scaled programming currents. Finally, TiSiN ALD deposition process is proposed as the solution to improve uniformity and scalability of Heater resistance. As Heater is the variable controlling the whole system, this approach guarantees the robustness of $e$PCM technology for automotive grade-0 applications.