학술논문

Context-sensitive static transistor-level IR analysis
Document Type
Conference
Source
2008 IEEE/ACM International Conference on Computer-Aided Design Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on. :797-802 Nov, 2008
Subject
Computing and Processing
Components, Circuits, Devices and Systems
Robotics and Control Systems
Power grids
Switches
Logic devices
Logic design
Circuits
Performance analysis
Silicon
Design automation
Logic gates
Microprocessors
Language
ISSN
1092-3152
1558-2434
Abstract
With advances in semiconductor process technology, chip power density has dramatically increased, making power grid integrity a critical concern at all stages of the design process. Given the inherent difficulty of capturing worst-case IR drops for all logic gates with dynamic vectors, a static flow is essential for verifying grid integrity on complex chip designs, especially microprocessors. A novel static transistor-level IR drop analysis flow which significantly reduces the conservatism of other static flows is presented. The key feature of this flow is a fast NAND decision diagram (NDD) algorithm, a lightweight variant of a boolean decision diagram (BDD) with the capacity to effectively process device transition exclusions in a per logical-device, context-sensitive fashion, thereby radically reducing the conservatism typical of static analysis.