학술논문
High-performance MSM photodetectors on semiinsulating InP:Fe/InGaAs:Fe/InP:Fe
Document Type
Conference
Author
Source
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels Indium Phosphide and Related Materials, 1992., Fourth International Conference on. :561-564 1992
Subject
Language
Abstract
The design, fabrication, and characterization of a novel type of InGaAs metal-semiconductor-metal (MSM) detector are reported. Based on an Fe-doped InGaAs layer and a 50-nm-thin Fe-doped InP cap layer which enhances the Schottky-barrier height, MSM detectors with low dark current of 15 nA at 5-V bias and a breakdown voltage of 25 V are realized. The high-speed characteristics are investigated by response measurements in the time and in the frequency domain. FWHMs (full widths at half maximum) of the impulse response of 17 ps and 13 ps are obtained under illumination with subpicosecond light pulses having wavelengths of 1.3 mu m and 0.62 mu m, respectively. Using the optical heterodyne technique at a wavelength of 1.3 mu m, the frequency response is investigated over a wide range of optical input powers (9 mu W-540 mu W) and bias voltages.ETX