학술논문

Single Event Effect Similarities between Heavy Ions and LASER tests in Advanced CMOS Image Sensors
Document Type
Conference
Source
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2019 19th European Conference on. :1-4 Sep, 2019
Subject
Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Performance evaluation
Protons
Sensitivity
Lasers
Layout
Single event upsets
CMOS image sensors
Pinned Photodiode (PPD)
Active Pixel Sensor (APS)
Monolithic Active Pixel Sensor (MAPS)
CMOS Image Sensor (CIS)
Camera
Single Event Effects (SEE)
Single Event Upset (SEU)
Single Event Latchup (SEL)
Language
ISSN
1609-0438
Abstract
This paper focuses on the similarities between heavy ions and LASER tests to evaluate single event effect in front-side and back-side illuminated CMOS image sensors using last generation imaging process. The results highlight the sensitivity to these devices to single event and combined results provide information related to layout architecture sensitivity.