학술논문
HfO2/Al2O3/InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line
Document Type
Article
Author
Source
ECS Transactions; September 2015, Vol. 69 Issue: 5
Subject
Language
ISSN
19385862; 19386737
Abstract
We report on electrical characteristics of HfO2/Al2O3gate dielectric on InGaAs as a function of Al2O3ALD cycles. We also investigate the effect of a NH3treatment in a 300mm PEALD chamber equipped with a capacitive plasma. It is shown that 8 Al2O3cycles are required to achieve a high level capacitance (1.75μF/cm²) and an interface trap density (Dit) around 6×1012cm-²eV-1. The NH3plasma treatment through an Al2O3 layer is able to integrate nitrogen at the InGaAs interface and to form an oxynitride GaOxNy.without deterioration of the C-V characteristics.