학술논문
Magnetoresistance of (Zn1-xMnx)3As2in region of hopping conductivity
Document Type
Article
Author
Source
Journal of Magnetism and Magnetic Materials; February 1995, Vol. 140 Issue: 1 p2021-2022, 2p
Subject
Language
ISSN
03048853
Abstract
Magnetoresistance (MR) of (Zn1-xMnx)3As2(0 ≤ x≤ 0.13) is measured at 4 < T< 20 K. In applied fields < 1 T positive MR is observed for all compositions investigated. Above 1 T it is negative. The positive contribution is attributed to shift of the mobility threshold, and the negative one to suppression of the underbarrier spin-flip scattering of holes in the magnetic field.