학술논문
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
Document Type
article
Author
Source
Brazilian Journal of Physics. September 2010 40(3)
Subject
Language
English
ISSN
0103-9733
Abstract
We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 × 10(4) and mobility is 0.13cm²/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.