학술논문

Dynamic random access memory having bipolar and C-MOS transistor
Document Type
Patent
Author
Source
Subject
Language
Abstract
A dynamic random access memory device is provided having a dynamic memory cell, a word line coupled to the dynamic memory cell, a data line coupled to the dynamic memory cell, a precharge circuit coupled to the data line, a word driver coupled to the word line and a decoder coupled to the word driver. A plurality of address lines coupled to the decoder. The decoder has a first logic circuit whose inputs are connected to the plurality of address lines. The decoder also has a latch circuit whose input is connected to an output of the first logic circuit and whose output is connected to the word line.