부산대학교 도서관

During semiconductor processes, it is very important to control particle contamination. In this study, 1 and 2 μm particles were deposited by electrostatic force on flat substrate surfaces, including wafer, glass, and copper grids. With the increase of voltage from 0 kV to 10 kV, the efficiency of particle deposition was enhanced. When the voltage was 0 kV, the concentration of particle deposition was so little that the contaminated samples could not be detected by SEM. In the same concentration of PSL solution, the efficiency of deposition of 1-μm particles was greater than 2 μm particles with increasing voltage. The atomizer more easily generated 1 μm particles compared to 2 μm particles. In addition, 2 μm particles had more loss when they were moving with airstream in the line of the deposition system, and small particles had bigger electrical mobility. According to the results of different substrates, we know particles were more easily deposited on the glass surface than the wafer surface. This is because the wafer has greater hardness than glass, making particles bounce from the substrate more. In addition, through modifying the inlet nozzle of the particle deposition chamber, the concentration of particle deposition can be increased by 53.8% and 76.9%. In this study, the standard micro contaminated wafer and glass can be made by this deposition system.