부산대학교 도서관

Ni-doped ZnO thin films with varying concentrations (0 wt%, 3 wt% & 7 wt% of Ni) were fabricated using the pulsed laser deposition technique on fused silica substrates by maintaining the substrate temperature of 300 ºC and an oxygen partial pressure of 1 mTorr. To verify the structural integrity of the deposited films, grazing angle X-ray diffraction (Gi-XRD) study was conducted by utilizing a laboratory X-ray source. The Gi-XRD patterns demonstrated that all deposited films exhibiting the crystalline behavior and were oriented along (002) plane, confirming the wurtzite symmetry of ZnO. To investigate the electronic structure, X-ray absorption near edge structure (XANES) measurements were performed using X-ray absorption spectroscopy (XAS) at the Zn, Ni L 3,2 and O K-edges for all the deposited samples. The O K-edge XANES analysis derived from XAS data gives the confirmation about incorporation of Ni in ZnO lattice. The results obtained from this study contribute towards the understanding of the structural and electronic properties of Ni-doped ZnO thin films, which are relevant for various applications in the field of advanced electronic and optoelectronic devices.