학술논문
Effect of low-temperature post-growth annealing on anisotropic strain in epitaxial Fe layers deposited on GaAs(001)
Document Type
Academic Journal
Source
Journal of Applied Physics. June 28, 2016, Vol. 119 Issue 24
Subject
Language
English
ISSN
0021-8979
Abstract
The article aims to study the effect of low-temperature post growth annealing on the Fe layer in an epitaxialFe/GaAs(001) heterojunction. High resolution X-ray diffraction and X-ray reflectivity are used to probe the Fe layer before and after annealing. It is proved that annealing leads to increase in the compressive strain and improves isotropy of the ferromagnetic layer as revealed by measuring both lateral and out-of-plane lattice components.