학술논문
Study of latent damage in Power MOSFETs caused by heavy ion irradiation
Document Type
Author abstract
Source
IEEE Transactions on Nuclear Science. Dec 2008, Vol. 55 Issue 6, p3388, 6 p.
Subject
Language
English
ISSN
0018-9499
Abstract
The latent damages were investigated for Power MOSFETs irradiated by high LET heavy ions. It was demonstrated that the post irradiation leakage current in damaged gate oxide was determined by the initial gate stress after the irradiation and the damage was stable even after a million of gate stress repetition. Index Terms--Heavy ion, latent damage, power MOSFET.