학술논문
A new method to extract bulk carrier mobility in germanium-on-insulator
Document Type
Technical report
Author
Source
IEEE Transactions on Electron Devices. May 2008, Vol. 55 Issue 5, p1250, 5 p.
Subject
Language
English
ISSN
0018-9383
Abstract
The article explains a new method, which can be easily employed for extracting the bulk carrier mobility of the germanium-on-insulator (GOI) films. The approach is shown to be extremely effective and can be even used for GeOI and silicon-on-insulator substrates.