부산대학교 도서관

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.nima.2007.01.119 Byline: U.L. Olsen (a), X. Badel (b), J. Linnros (b), M. Di Michiel (c), T. Martin (c), S. Schmidt (a), H.F. Poulsen (a) Keywords: 3DXRD; Scintillators; CsI:Tl; Electrochemical etching; Efficiency; Radiation damage Abstract: A newly developed fabrication method makes the formation of deep structured scintillator screens possible. We demonstrate that electrochemical etching in silicon can be used to produce regular arrays of 120[mu]m deep pores with a 4[mu]m pitch. A layer of SiO.sub.2 is grown on the pore walls and CsI:Tl is melted into the pores, resulting in a structure with a high refractive index core surrounded by a quartz cladding, providing efficient light guiding. The efficiency and radiation hardness of the scintillator is evaluated in realistic environment at beamline ID15 at the ESRF synchrotron. The efficiency is measured to be a factor two higher than a planar YAG: Ce scintillator of equal thickness, while radiation damage is found to be neglectable for doses up to at least 2x10.sup.4 Gy. Author Affiliation: (a) Centre for Fundamental Research: Metal Structures in Four Dimensions, RisA[cedilla] National Laboratory, 4000 Roskilde, Denmark (b) IMIT, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden (c) ESRF, 6 rue Jules Horowitz, 38043 Grenoble Cedex, France