학술논문
Single-event burnout of super-junction power MOSFETs
Document Type
Author Abstract
Author
Source
IEEE Transactions on Nuclear Science. Dec 2004, Vol. 51 Issue 6, p3332, 4 p.
Subject
Language
English
ISSN
0018-9499
Abstract
The experimental results of single-event burnout (SEB) of super-junction power MOSFETs are reported for the first time in comparison with those of standard MOSFETs. Similar tendencies were observed from both results. While a super-junction MOSFET (SJ-MOSFET) has an attractive electrical performance such as low on-resistance and high breakdown voltage, the experiment demonstrated that there was no structural advantage in SEB tolerance. Index Terms--Angular irradiation, energetic particle induced charge spectroscopy (EPICS) spectra, power MOSFET, single-event burnout (SEB), super-junction power MOSFET.