학술논문
Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering
Document Type
Article
Author
Source
In: IEEE Electron Device Letters . (IEEE Electron Device Letters, 1 April 2024, 45(4):593-596)
Subject
Language
English
ISSN
15580563
07413106
07413106