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Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier

Document Type

Article

Author

Maeda, S.; Kawabata, S.; Nagase, I.; Baratov, A.; Ishiguro, M.; Nezu, T.; Igarashi, T.; Sekiyama, K.; Terai, S.; Yamamoto, A.; Asubar, J.T.; Shinohara, K.; Empizo, M.J.F.; Sarukura, N.; Kuzuhara, M.

Source

In: Journal of Semiconductor Technology and Science. (Journal of Semiconductor Technology and Science, 2024, 24(1):25-32)

Subject

Language

English

ISSN

15981657

Online Access

Open Access (EBSCO) Web of Science JCR 저널정보 Scopus Find it@PNU

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