학술논문
Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching
Document Type
Article
Author
Source
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films . (Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1 March 2024, 42(2))
Subject
Language
English
ISSN
15208559
07342101
07342101