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β-rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination

Document Type

Article

Author

Migliore, F.; Principato, F.; Cannas, M.; Gelardi, F.M.; Agnello, S.; Alessi, A.; Girard, S.; Lombardo, A.; Vecchio, D.; Brischetto, A.

Source

In: Applied Physics Letters. (Applied Physics Letters, 22 January 2024, 124(4))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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