학술논문

Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO2 thin films on H-/OH-terminated Si (100) surfaces

Document Type

Article

Author

Park, J.; Jeong, M.; Cho, Y.J.; Tai, T.B.; Shin, H.; Lim, J.C.; Chang, H.S.; Kim, K.J.

Source

In: Journal of Vacuum Science and Technology B. (Journal of Vacuum Science and Technology B, 1 December 2023, 41(6))

Subject

Language

English

ISSN

21662754
21662746

Online Access

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