학술논문
Impact of the NO annealing duration on the SiO2 /4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps
Document Type
Article
Author
Source
In: Materials Science in Semiconductor Processing . (Materials Science in Semiconductor Processing, January 2024, 169)
Subject
Language
English
ISSN
13698001