학술논문

Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer
Document Type
Article
Source
In: ACS Nano. (ACS Nano, 25 April 2023, 17(8):7695-7704)
Subject
Language
English
ISSN
1936086X
19360851