학술논문
Atomic and electronic structures of interfaces between amorphous (Al2 O3 )1- x (SiO2 )x and GaN polar surfaces revealed by first-principles simulated annealing technique
Document Type
Article
Author
Source
In: Journal of Applied Physics . (Journal of Applied Physics, 14 February 2023, 133(6))
Subject
Language
English
ISSN
10897550
00218979
00218979