학술논문

2.2 W/mm at 94 GHz in AlN/GaN/AlN High-Electron-Mobility Transistors on SiC

Document Type

Article

Author

Hickman, A.; Chaudhuri, R.; Li, L.; Nomoto, K.; Xing, H.G.; Jena, D.; Moser, N.; Elliott, M.; Guidry, M.; Shinohara, K.; Hwang, J.C.M.

Source

In: Physica Status Solidi (A) Applications and Materials Science. (Physica Status Solidi (A) Applications and Materials Science, August 2023, 220(16))

Subject

Language

English

ISSN

18626319
18626300

Online Access

Full Text (Wiley Journals) Full Text (Wiley-DB) Web of Science JCR 저널정보 Scopus Find it@PNU

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