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Single G centers in silicon fabricated by co-implantation with carbon and proton

Document Type

Article

Author

Baron, Y.; Durand, A.; Robert-Philip, I.; Jacques, V.; Cassabois, G.; Dréau, A.; Herzig, T.; Pezzagna, S.; Meijer, J.; Khoury, M.; Abbarchi, M.; Hartmann, J.-M.; Reboh, S.; Gérard, J.-M.

Source

In: Applied Physics Letters. (Applied Physics Letters, 22 August 2022, 121(8))

Subject

Language

English

ISSN

00036951

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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