학술논문
Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by in Situ Tailoring the SiNx Passivation Layer
Document Type
Article
Author
Source
In: ACS Applied Materials and Interfaces . (ACS Applied Materials and Interfaces, 21 April 2021, 13(15):18264-18273)
Subject
Language
English
ISSN
19448252
19448244
19448244