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Highly frequency-, temperature-, and bias-stable dielectric properties of 500 °C processed Bi2SiO5 thin films with low dielectric loss

Document Type

Article

Author

Ke, Y.; Huang, W.; Thatikonda, S.K.; Chen, R.; Yao, C.; Qin, N.; Bao, D.

Source

In: Current Applied Physics. (Current Applied Physics, June 2020, 20(6):751-754)

Subject

Language

English

ISSN

15671739

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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