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Improvement of sensing margin and reset switching fail of RRAM

Document Type

Article

Author

Park, W.Y.; Ju, W.; Ko, Y.S.; Kim, S.G.; Ha, T.J.; Lee, J.Y.; Park, Y.T.; Kim, K.W.; Lee, J.C.; Lee, J.H.; Moon, J.Y.; Lee, B.M.; Gyun, B.G.; Lee, B.-K.; Kim, J.K.

Source

In: Solid-State Electronics. (Solid-State Electronics, June 2019, 156:87-91)

Subject

Language

English

ISSN

00381101

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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