학술논문
A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device
Document Type
Conference Paper
Author
Richter, R.; Trentzsch, M.; Dunkel, S.; Muller, J.; Moll, P.; Bayha, B.; Mothes, K.; Henke, A.; Mazur, M.; Paul, J.; Krottenthaler, P.; Poth, J.; Jansen, S.; Huselitz, R.; Zaka, A.; Herrmann, T.; Bazizi, E.M.; Beyer, S.; Kim, H.; Ghazavi, P.; Om'Mani, H.; Lemke, S.; Tkachev, Y.; Zhou, F.; Kim, J.; Liu, X.; Tiwari, V.; Do, N.
Source
In: Technical Digest - International Electron Devices Meeting, IEDM , 2018 IEEE International Electron Devices Meeting, IEDM 2018. (Technical Digest - International Electron Devices Meeting, IEDM, 16 January 2019, 2018-December:18.5.1-18.5.4)
Subject
Language
English
ISSN
01631918