학술논문
Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization
Document Type
Article
Author
Source
In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics . (Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 1 March 2017, 35(2))
Subject
Language
English
ISSN
21662754
21662746
21662746