학술논문
Atomic layer deposition of Hfx Aly Cz as a work function material in metal gate MOS devices
Document Type
Article
Author
Source
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films . (Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, January 2014, 32(1))
Subject
Language
English
ISSN
07342101
15208559
15208559