학술논문

The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask
Document Type
Article
Source
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. (Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, May 1996, 112(1-4):196-200)
Subject
Language
English
ISSN
0168583X