학술논문
Effect of Oxygen plasma treatment on the performance of GaN-based MIS-HEMTs
Document Type
Conference
Author
Source
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Future of Electron Devices, Kansai (IMFEDK), 2022 IEEE International Meeting for. :1-3 Nov, 2022
Subject
Language
Abstract
We have studied the effects of oxygen plasma treatment prior to insulator deposition on the electrical performance of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices treated with oxygen plasma exhibit more positive threshold voltages, less hysteresis in transfer curves and higher peak transconductance values compared with reference devices without oxygen plasma treatment. Our results suggest that oxygen plasma treatment of the AlGaN surface before insulator deposition can improve the overall electrical performance of GaN-based MIS-HEMTs.