학술논문
Single Event Effects in 3-D NAND Flash Memory Cells With Replacement Gate Technology
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(4):308-313 Apr, 2023
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
We studied the heavy-ion single event effect (SEE) response of 3-D NAND flash memory cells with charge-trap (CT)-based replacement gate (RG) technology. Error cross sections, threshold voltage shifts, and underlying mechanisms are discussed. The behavior of RG cells is compared with previous generations of flash NAND memory cells with floating-gate (FG) architecture, both planar and 3-D. The cell array structure, the technology parameters, and the materials impacting radiation susceptibility of the different types of cells are discussed.