학술논문
A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies
Document Type
Conference
Author
Source
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :7-10 Nov, 2022
Subject
Language
ISSN
2687-8577
Abstract
A new Dodecagonal (polygon with twelve sides, short for Dod) cell topology is designed for 4H-SiC planar power MOSFETs. The Dod cell is used in the layout design of the 650 V SiC MOSFETs. The nominal Hexagonal (Hex) cell and a recently published Octagonal (Oct) cell are also used on the 650 V SiC MOSFET layout designs for comparisons. The devices are fabricated, diced, and packaged for static and dynamic characterizations. Experimental results show that the Hex-cell MOSFET has the lowest specific ON-resistance (R on,sp ) and is suitable for high-power applications. The Dod and Oct-cell MOSFETs have much smaller gate-drain capacitance than Hex-cell MOSFETs, making them good candidates for high-frequency applications. The new Dod cell is designed with optimized channel density to have reduced R on,sp compared to the Oct cell.