학술논문
Micro-Latchup Location and Temperature Characterization in a 7-nm Bulk FinFET Technology
Document Type
Conference
Author
Source
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2021 21th European Conference. :1-7 Sep, 2021
Subject
Language
ISSN
1609-0438
Abstract
Location and temperature characteristics of micro-latchups at the 7-nm bulk FinFET technology are investigated through thermal images. Thermal images show that micro-latchups are induced at random locations when tap cells are placed evenly across the die. Inducing multiple micro-latchups on the die results in clustering of micro-latchups and significant increase in IC-level current and local temperature on the die. Micro-latchups become eliminated serially when the supply voltage is reduced but kept above the holding voltage. Subsequent increase in supply voltage reinitiates micro-latchups on the IC. Temperature within a micro-latchup region shows an increase from room temperature to as high as 140 °C. These results show clustering of micro-latchups are a serious reliability threat at the 7-nm FinFET node.