부산대학교 도서관

This work provides an experimentally driven performance comparison of commercial Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated temperatures with the focus being in assessing the on resistance (R ON ) increase due to hard switching in correlation to other performance indicators. Device technologies evaluated include the Enhancement (E-mode) AlGaN/GaN Hybrid Drain p-GaN layer Gate Injection Transistor (p-GaN HD-GIT), the cascode AlGaN/GaN High Electron Mobility Transistor (cascode HEMT). For the dynamic RON analysis, a special setup was utilized which allows synchronized drain and gate pulses, and the ability to switch from OFF to ON in as little as 20µs. The ability to apply a wide range of voltage levels, stress duration and temperature enabled measurable increase in the dynamic RON in both the cascode HEMT and the p-GaN HD-GIT. Nonetheless, the results highlight a strong difference in their robustness.