부산대학교 도서관

Terahertz technology is largely dependent upon planar on-chip antennas that radiate downwards through the substrate, and so an effective means to interface these antennas with integrated waveguides is an attractive prospect. We present a viable methodology for backside coupling between a terahertz oscillator chip and a broadband all-intrinsic-silicon dielectric waveguide. Our investigation employs resonant tunneling diodes as compact two-terminal electronic terahertz oscillators, and terahertz waves are observed from 270 GHz to 404 GHz. The fact that this power is accessed via a curved length of silicon waveguide validates successful backside coupling.