학술논문

A −20-dBm Sensitivity RF Energy-Harvesting Rectifier Front End Using a Transformer IMN
Document Type
Periodical
Source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 30(11):1808-1812 Nov, 2022
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Transformers
Q-factor
Inductors
Impedance
Inductance
System-on-chip
Sensitivity
Cross-coupled differential drive (CCDD)
impedance matching network (IMN)
radio frequency energy harvesting (RFEH)
Language
ISSN
1063-8210
1557-9999
Abstract
This article describes a fully integrated CMOS radio frequency energy-harvesting (RFEH) front end. It features an on-chip stacked step-up transformer integrated with a cross-coupled differential drive (CCDD) rectifier to enhance the input sensitivity. The transformer also serves as an on-chip balun for the CCDD rectifier. The CCDD rectifier innovates a gate-biasing technique and realizes coupling capacitors at the end of each stage to increase the subsequent stage biasing. Here, our RFEH front end operating at 900 MHz achieves an improved sensitivity of −20 and −19.2 dBm at the 1-V output for no-load and a 1- $\text{M}\Omega $ load, respectively.