학술논문
Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(11):6016-6022 Nov, 2022
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
In this work, we present a phenomenological cryogenic model for gallium nitride (GaN) high electron mobility transistors (HEMTs) with validity all the way down to a temperature of 10 K, benchmarked with experimental characterization results. The device under test (DUT) for cryogenic characterization is a GaN HEMT with a channel length of 250 nm and a gate width of $40~\mu \text{m}$ . The characterization results exhibit the negative threshold voltage shifts of −3.437, −3.087, and −2.998 V at the temperatures of 300, 60, and 10 K, respectively. Additionally, kink effects at cryogenic temperatures in output characteristics are observed that behave non-monotonically with gate-to-source bias. The impact of detrapping is modeled to investigate the negative shift in ${V}_{\text {TH}}$ with increasing temperature. To model the kink, the effects of temperature, impact ionization, and field-dependent trapping/detrapping on ${V}_{\text {TH}}$ have been explored and implemented as a submodel in the industry standard Advanced SPICE Model (ASM)-HEMT framework. Here, we aim to overcome the limitations of the prior GaN device models in the quest for enabling GaN-based circuits for cryogenic applications, such as deep space reception, radio astronomy, and quantum computing.