부산대학교 도서관

As the basis of three-dimensional (3D) integration for scaling in the field of MEMS/NEMS, wide through-silicon via can transform planar interconnections into vertical ones, realizing higher interconnection density, shorter line size, and shorter signal delay, together with a much smaller device size and higher integration density. In this paper, a comprehensive modular manufacturing strategy for 3D MEMS/NEMS wTSVs with aspect ratio up to 11, consisting of 3 etching and 2 filling designs and process innovation, meeting all the above requirements, together with extra advantages such as high processability and integrability, is proposed. An organic liner layer process can be applied to low-temperature bio-chips, inorganic liner process will be essential for high reliability and high load 3D power devices. The filling quality of two processes are further analyzed, exhibiting a low leakage current of 20 pA under 30V bias and a low parasitic capacitance lower than 100 fF, paving a clear pathway for the next-generation 3D MEMS/NEMS integrated system.