부산대학교 도서관

Purely monolithic or hybrid-monolithic integration of CMOS compatible platforms with IR active optical components can be a rewarding advancement towards scalable group IV MIR photonics. Here, a polarization-sensitive SWIR phototransistor based on black arsenic (b-As) and germanium (Ge) heterojunction is discussed. The device responds to a broad range of light spectrum (0.6 – 4 $\mu \text{m}$ ). In the SWIR infrared band, the device has a high responsivity (402 A/W at 3 $\mu \text{m}$ ), high detectivity (3.78 $\times 10^{{11}}$ Jones), low noise equivalent power (4.4 $\times10$ -15 WHz 1/2 ), and a fast response (14.6 $\mu $ sec). Due to the anisotropy observed in b-As, the device also demonstrated highly polarization sensitive photocurrent. The present study opens up new avenues for 2D materials-based polarization sensitive CMOS compatible optical platforms.