학술논문
High-Temperature HEMT Model
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(9):4821-4827 Sep, 2022
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the core École Polytechnique Fédérale de Lausanne (EPFL) HEMT model, the temperature dependence of various parameters including mobility, saturation velocity, critical electric fields, access region resistance, threshold voltage, and subthreshold slope was taken into account in the model. The accuracy of the developed model is validated by the TCAD simulation results and experimental data over a wide range of ambient temperatures from −20 °C to 500 °C.