부산대학교 도서관

This paper will demonstrate wirebond pad design considerations for the source pad of a power trenchFET using three levels of metal. There will be a discussion of how the pad design will impact the pad mechanical strength through the bonding process. Both Aluminum-Copper (AlCu) and Damascene Copper power metals have been investigated. There will also be a comparison of bondpad design to electrical simulation results. An optimal design can be obtained by an analysis of these tradeoffs. Finally, the proposed designs have been built on silicon and evaluated both mechanically and electrically concluding with the best design found for this application.