학술논문

A Reconfigurable CMOS Rectifier With 14-dB Power Dynamic Range Achieving >36-dB/mm2 FoM for RF-Based Hybrid Energy Harvesting
Document Type
Periodical
Source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 30(10):1533-1537 Oct, 2022
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Radio frequency
Transistors
Threshold voltage
Energy harvesting
Sensitivity
Very large scale integration
Hybrid power systems
CMOS
figure of merit (FoM)
power dynamic range (PDR)
radio frequency-based hybrid energy harvesting (RFHEH)
Language
ISSN
1063-8210
1557-9999
Abstract
This brief presents a novel circuit architecture for a Dickson-based reconfigurable rectifier with wide power dynamic range (PDR). Besides, a novel figure of merit (FoM) concerning the reconfigurable rectifiers is formulated to provide a more comprehensive assessment of the rectifier’s performance. The proposed reconfigurable design improves the operating range of the rectifier by adaptively switching between the six-stage configuration during low-power operation and the 12-stage configuration during high-power operation. Fabricated in 130-nm CMOS, the proposed reconfigurable rectifier measures a PDR of 14 dB with a peak power conversion efficiency (PCE) of 34.93% for 1- $\text{M}\Omega $ load operating at 900 MHz. Relative to the recently published reconfigurable rectifiers, our design records the highest FoM of 36.98 dB/mm2, with minimum harvesting downtime.