부산대학교 도서관

This paper presents a buffer Schmitt trigger (ST) with six transistors and adjustable hysteresis width via controlling Upper Threshold Point (UTP) in Carbon Nano-Tube Field Effect Transistor (CNTFET) 32nm technology node. The adjusting voltage for proper operation of this circuit is 0.44v to 0.68v which is less than the supply voltage. Due to the wide hysteresis width of this circuit, it has a good ability to reject large noise and fluctuate at its input signal. The proposed circuit is simulated in the H-SPICE platform using the 32nm Stanford model. In this ST circuit the delay and power delay product (PDP) reduction are 75.80% and 76.10% respectively in comparison to the conventional one. Since CNTFET technology is used for this design, PDP is almost independent of temperature variation. The static power dissipation and average dynamic power of this design are 48pW and 1.28$\mu$W respectively that are measured in 500MHz switching frequency.