학술논문
Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(6):838-841 Jun, 2022
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
Performance improvement on Ge nFinFET, pFinFET and CMOS inverter can be achieved by using a novel low temperature damage-free supercritical phase fluid (SCF) treatment. Thanks to effective reduction of unstable oxidation states, oxygen vacancies and interface traps, higher on-off current ratios ( ${8}\times {10}^{{5}}$ for pFinFET and ${3.3}\times {10}^{{5}}$ for nFinFET), lower S.S. (72 mV/dec), higher on current (>45% improvement) and better reliability in Ge FinFETs are achieved with a SCF treatment as compared with a remote plasma post-oxidation (PPO) one. Besides, a higher voltage gain (88 V/V) of Ge FinFET CMOS inverter is obtained with a SCF treatment in comparison with a remote PPO one.